MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V driv

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ proces

Dual 10-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The MB2821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • 20-bit positive-edge triggered register • Multiple VCC and GND pins minimize switching noise • Live insertion/extraction permitted • Power

Dual 10-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The MB2821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • 20-bit positive-edge triggered register • Multiple VCC and GND pins minimize switching noise • Live insertion/extraction permitted • Power

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS