位置：首页 > IC中文资料第6657页 > SBL13003
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SBL13003 | High Voltage Fast-Switching NPN Power Transistor General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. Features - Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat | SEMIWELL 矽门微 |   | |
SBL13003 | 1.5W Bipolar Junction Transistor, 1.5A Ic, 400V Vceo, 700V Vces | SEMIWELL 矽门微 | | |
SBL13003 | High Voltage Fast-Switching NPN Power Transistor 文件：700.21 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
SBL13003产品属性
- 类型
描述
- 型号
SBL13003
- 功能描述
High Voltage Fast-Switching NPN Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DAITO保险丝 |
2450+ |
DIP |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
GI |
24+ |
TO-220 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
LITEON |
17+ |
TO-220 |
6200 |
||||
LITEON |
26+ |
TO-220 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
肖特基整流管 |
24+ |
TO-220A |
5000 |
||||
LT/凌特 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Sage Millmeter |
24+ |
模块 |
400 |
||||
UTC/友顺 |
24+ |
TO-220F |
100000 |
原装现货 |
|||
MINI-CIRCUITS |
24+ |
N/A |
193 |
原装原装原装 |
|||
SEMIWELL |
23+ |
TO-92 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
SBL13003规格书下载地址
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SBL13003数据表相关新闻
SBC8-221-182
www.58chip.com
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