N-Ch Small Signal MOSFET

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MosFET

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

60V N-Channel Enhancement Mode MOSFET

Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V)

N-Channel Enhancement MOSFET

FEATURES Low Gate Charge for Fast Switching. ESD Protected Gate. APPLICATIONS Power Management Load Switch Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.

N-Ch Small Signal MOSFET

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Dual N-Channel MOSFET

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MosFET

Dual N-Channel 60 V (D-S) MOSFET

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Dual N-Channel MOSFET

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MOSFET

115mA, 60V N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

文件：1.01112 Mbytes Page：3 Pages

Dual -Channel MOSFET.

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Dual -Channel MOSFET.

文件：312.66 Kbytes Page：2 Pages

N-Channel 60-V (D-S) MOSFET

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N-Channel Enhancement MOSFET

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N-Channel Enhancement MOSFET

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0.38A, 60V, RDS(O) 2.8 ohm N-Channel Enhancement Mode Power MOSFET

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N-Ch Small Signal MOSFET

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N-Channel 60-V (D-S) MOSFET

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h