115mA, 60V N-Channel Enhancement Mode Power MOSFET

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MosFET

N-Channel Enhancement MOSFET

FEATURES Low Gate Charge for Fast Switching. ESD Protected Gate. APPLICATIONS Power Management Load Switch Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.

N-Channel Enhancement Mode Power MOSFET

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Dual -Channel MOSFET.

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Dual -Channel MOSFET.

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N-Channel Enhancement MOSFET

N-Channel Enhancement MOSFET

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N-Channel 60-V (D-S) MOSFET

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MosFET

N-Channel Enhancement MOSFET

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used