Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

General Features

● VDS 60V

● ID 300mA

● RDS(ON)( at VGS=10V) ＜2.5ohm

● RDS(ON)( at VGS=4.5V) ＜3.0ohm

● ESD Protected Up to 2.0KV (HBM)

Application

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS