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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJP63K2DPK | N-Channel IGBT | RENESAS 瑞萨 |   | |
Silicon N Channel IGBT High Speed Power Switching 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ 3. High speed switching: tr= 60 ns typ, tf= 200 ns typ. 4. Low leak current: ICES= 1 A max 5. Isolated package TO-220FL | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High speed power switching * Trench gate and thin wafer technology (G6H-II series) * Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ * High speed switching: tr= 60 ns typ, tf= 200 ns typ. * Low leak current: ICES= 1 A max | RENESAS 瑞萨 | |
RJP63K2DPK产品属性
- 类型
描述
- 型号
RJP63K2DPK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High speed power switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2511 |
TO-220 |
30 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
RENESAS/瑞萨 |
23+ |
PBFREE |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
3970 |
原厂直销,现货供应,账期支持! |
|||
RENESAS/瑞萨 |
25+ |
PBFREE |
880000 |
明嘉莱只做原装正品现货 |
|||
ADI |
23+ |
TO-3P |
8000 |
只做原装现货 |
|||
RENESAS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS/瑞萨 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
RJP63K2DPK规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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