Silicon N Channel IGBT High Speed Power Switching

* Low collector to emitter saturation voltage VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)  * Gate to emitter voltage rating 30 V * Pb-free lead plating and chip bonding

Silicon N Channel IGBT High Speed Power Switching

* Low collector to emitter saturation voltage VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)  * Gate to emitter voltage rating 30 V * Pb-free lead plating and chip bonding

Silicon N-Channel IGBT High Speed Power Switching / TO-3PFM Package

Silicon N Channel IGBT High Speed Power Switching

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