位置：首页 > IC中文资料第5571页 > RJP30K3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJP30K3 | Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H-II series) • Low collector to emitter saturation voltage VCE(sat) = 1.1V typ • High speed switching tr = 90 ns typ, tf = 250 ns typ • Low leak current ICES = 1µA max • Isolated package TO-220FL | RENESAS 瑞萨 |   | |
Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H-II series) • Low collector to emitter saturation voltage VCE(sat) = 1.1V typ • High speed switching tr = 90 ns typ, tf = 250 ns typ • Low leak current ICES = 1µA max • Isolated package TO-220FL | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching | RENESAS 瑞萨 | |
RJP30K3产品属性
- 类型
描述
- 型号
RJP30K3
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
2026+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
RENESAS/瑞萨 |
24+ |
TO220F |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
24+ |
TO263-3 |
25000 |
一级专营品牌全新原装热卖 |
|||
RENESAS |
TO220/3 |
1335 |
全新原装进口自己库存优势 |
||||
RENESAS/瑞萨 |
21+ |
42 |
10000 |
只做原装,质量保证 |
|||
RENESAS |
14+ |
TO-220F |
30 |
全新 发货1-2天 |
|||
RENESAS/瑞萨 |
23+ |
42 |
24981 |
原装正品代理渠道价格优势 |
|||
RENESAS/瑞萨 |
24+ |
TO-3P |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS/瑞萨 |
42 |
42 |
1000 |
原装现货 |
RJP30K3规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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