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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJP30H2DPK-M0 | Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tf = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max | RENESAS 瑞萨 |   | |
RJP30H2DPK-M0 | Trench gate and thin wafer technology 文件：159.37 Kbytes Page：6 Pages | RENESAS 瑞萨 | | |
RJP30H2DPK-M0 | Silicon N Channel IGBT High speed power switching | RENESAS 瑞萨 | | |
Trench gate and thin wafer technology 文件：159.37 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Trench gate and thin wafer technology | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High speed power switching | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tr = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max ● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ | RENESAS 瑞萨 | |
RJP30H2DPK-M0产品属性
- 类型
描述
- 型号
RJP30H2DPK-M0
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High speed power switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
612 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
10+ |
TO-3P |
335 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
27 |
||||||
RENESAS/瑞萨 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RENESAS/瑞萨 |
2447 |
SOT-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS |
24+ |
TO-3P |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
2023+ |
TO-247 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
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2019-3-7
DdatasheetPDF页码索引
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