位置：首页 > IC中文资料 > RJP30H1DPE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 A max. ● Isolated package TO-220FL | RENESAS 瑞萨 |   | ||
Silicon N Channel IGBT High speed power switching * Trench gate and thin wafer technology (G6H-II series) * High speed switching: tr = 80 ns typ., tf = 150 ns typ. * Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. * Low leak current: ICES= 1 A max. | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High speed power switching * Trench gate and thin wafer technology (G6H-II series) * High speed switching: tr = 80 ns typ., tf = 150 ns typ. * Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. * Low leak current: ICES= 1 A max. | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
瑞萨 |
24+ |
NA/ |
17138 |
原厂直销,现货供应,账期支持! |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
9548 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
25+ |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
|||
Renesas |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
RENSHAY |
2450+ |
TO-220F |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS |
22+ |
TO252 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS |
25+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
RJP30H1DPE规格书下载地址
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DdatasheetPDF页码索引
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