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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tr = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max ● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ | RENESAS 瑞萨 |   | ||
Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tf = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max | RENESAS 瑞萨 | | ||
Trench gate and thin wafer technology 文件：159.37 Kbytes Page：6 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO-3P |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
2026+ |
TO3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
RENESAS/瑞萨 |
24+ |
PBFREE |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/HITACHI |
TO-263-ORIG |
500 |
原装现货支持BOM配单服务 |
||||
RENESA |
2406+ |
TO-3P |
11260 |
诚信经营!进口原装!量大价优! |
|||
瑞萨 |
11+ |
TO3P |
922 |
||||
RJH |
25+ |
SMD |
35 |
全新原装正品支持含税 |
|||
RENESAS/瑞萨 |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS |
22+ |
T0-3P |
20000 |
公司只做原装 品质保障 |
|||
RENESAS |
24+ |
T0-3P |
16900 |
原装正品现货支持实单 |
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DdatasheetPDF页码索引
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