10VDriveNchMOSFET

Features 1)Lowon-resistance. 2)High-speedswitching. 3)WiderangeofSOA. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Application Switching

N-Channel200V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

HiPerFETPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverter ·BatteryChargers ·SynchronousRectification

N-ChannelEnhancementModePowerMOSFET

文件：561.78 Kbytes Page：7 Pages

N-ChannelSuperTrenchPowerMOSFET

文件：770.6 Kbytes Page：6 Pages