N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · Synchronous Rectification

N-Channel Enhancement Mode Power MOSFET

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N-Channel Super Trench Power MOSFET

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