位置：首页 > IC中文资料第11532页 > PTFB201402F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process, this device offers excellent thermal | Cree 科锐 |   | ||
High Power RF LDMOS Field Effect Transistor Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal | Infineon 英飞凌 | | ||
High Power RF LDMOS Field Effect Transistor Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal | Infineon 英飞凌 | | ||
High Power RF LDMOS Field Effect Transistor Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal | Infineon 英飞凌 | | ||
High Power RF LDMOS Field Effect Transistor Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal | Infineon 英飞凌 | | ||
High Power RF LDMOS Field Effect Transistor Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal | Infineon 英飞凌 | | ||
High Power RF LDMOS Field Effect Transistor | Infineon 英飞凌 | | ||
封装/外壳：H-37248-4 包装：卷带（TR） 描述：140W, SI LDMOS, 28V, 2010-2025MH 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED | | ||
封装/外壳：H-37248-4 包装：卷带（TR） 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED | | ||
Single Row Terminal Blocks 文件：1.88296 Mbytes Page：6 Pages | EATON 伊顿 | | ||
Single Row Terminal Blocks 文件：1.88296 Mbytes Page：6 Pages | EATON 伊顿 | | ||
ALL DIMENSIONS IN MM [INCH] 文件：31.76 Kbytes Page：1 Pages | E-SWITCH | |
PTFB201402F产品属性
- 类型
描述
- 型号
PTFB201402F
- 功能描述
射频MOSFET电源晶体管 RFP-LDMOS 9
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
Infineon Technologies |
22+ |
H372484 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
23+ |
8000 |
只做原装现货 |
||||
INFINEON |
23+ |
7000 |
|||||
Wolfspeed Inc. |
25+ |
H-37248-4 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON/英飞凌 |
24+ |
415 |
现货供应 |
||||
INFINEON/英飞凌 |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
INFINEON |
24+ |
NA |
5000 |
只做原装公司现货 |
|||
Cree/Wolfspeed |
100 |
PTFB201402F芯片相关品牌
PTFB201402F规格书下载地址
PTFB201402F参数引脚图相关
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DdatasheetPDF页码索引
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