型号 功能描述 生产厂家&企业 LOGO 操作
PTFB201402FCV1R250

High Power RF LDMOS Field Effect Transistor

Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

High Power RF LDMOS Field Effect Transistor

Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

PTFB201402FCV1R250产品属性

  • 类型

    描述

  • 型号

    PTFB201402FCV1R250

  • 功能描述

    射频MOSFET电源晶体管

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2025-8-5 15:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
22+
H372484
9000
原厂渠道,现货配单
INFINEON/英飞凌
23+
TO-59
8510
原装正品代理渠道价格优势
Infineon Technologies
23+
H372484
8000
只做原装现货
Infineon Technologies
23+
H372484
7000
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
INFINEON
2017+
NA
28562
只做原装正品假一赔十!
INFINEON/英飞凌
24+
415
现货供应
INFINEON/英飞凌
23+
NA
89630
当天发货全新原装现货
INFINEON/英飞凌
23+
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
INFINEON
24+
NA
5000
只做原装公司现货

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