位置：首页 > IC中文资料第11532页 > PTFB201402FC
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PTFB201402FC | HighPowerRFLDMOSFieldEffectTransistor140W,28V,2010-2025MHz Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithWolfspeed’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal | CreeCree, Inc 科锐 |  |   |
PTFB201402FC | HighPowerRFLDMOSFieldEffectTransistor Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
HighPowerRFLDMOSFieldEffectTransistor Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
HighPowerRFLDMOSFieldEffectTransistor Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
HighPowerRFLDMOSFieldEffectTransistor Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
HighPowerRFLDMOSFieldEffectTransistor Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
封装/外壳：H-37248-4 包装：卷带（TR） 描述：140W, SI LDMOS, 28V, 2010-2025MH 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED WOLFSPEED, INC. |  | | |
封装/外壳：H-37248-4 包装：卷带（TR） 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED WOLFSPEED, INC. | | | |
SingleRowTerminalBlocks 文件：1.88296 Mbytes Page：6 Pages | EATONEaton All Rights Reserved. 伊顿伊顿公司 |  | | |
SingleRowTerminalBlocks 文件：1.88296 Mbytes Page：6 Pages | EATONEaton All Rights Reserved. 伊顿伊顿公司 | | | |
ALLDIMENSIONSINMM[INCH] 文件：31.76 Kbytes Page：1 Pages | E-SWITCH E-switch |  | |
PTFB201402FC产品属性
- 类型
描述
- 型号
PTFB201402FC
- 功能描述
射频MOSFET电源晶体管 RFP-LDMOS 9
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
1844+ |
NA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
INFINEON |
23+ |
NA |
8000 |
只做原装现货 |
|||
INFINEON |
23+ |
NA |
7000 |
||||
Infineon Technologies |
22+ |
H372484 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON/英飞凌 |
H-37248-4 |
22+ |
56000 |
全新原装进口,假一罚十 |
|||
Wolfspeed Inc. |
25+ |
H-37248-4 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON/英飞凌 |
24+ |
415 |
现货供应 |
||||
INFINEON/英飞凌 |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
PTFB201402FC芯片相关品牌
PTFB201402FC规格书下载地址
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DdatasheetPDF页码索引
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