N-channel TrenchMOS??standard level FET

Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. Features ■ Standard level compatible ■ Isolated package. Applications ■ DC motor control ■ Synchronous rectification ■ DC-to-DC converters ■ General pur

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS™ standard level FET

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

N-Channel 60-V (D-S) MOSFET

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20A mps,60 Volts N-CHANNEL MOSFET

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Fast Switching

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