TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 45A@ TC=25℃ Drain Source Voltage -VDSS= 30V(Min) Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

TrenchMOS transistor Standard level FET

N-Channel Logic Level PWM Optimized Power MOSFET

General Description This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

N-Channel 30-V (D-S) MOSFET

文件：1.01523 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01519 Mbytes Page：8 Pages

30V LOGIC N-Channel MOSFET

文件：668.76 Kbytes Page：9 Pages

30V LOGIC N-Channel MOSFET

文件：668.76 Kbytes Page：9 Pages