TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

N-Channel Logic Level PWM Optimized Power MOSFET

General Description This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

N-Channel 30-V (D-S) MOSFET

文件：1.01523 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01519 Mbytes Page：8 Pages

30V LOGIC N-Channel MOSFET

文件：668.76 Kbytes Page：9 Pages

30V LOGIC N-Channel MOSFET

文件：668.76 Kbytes Page：9 Pages