N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast swit

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU ​​​​​​​ APPLICATIONS • OR-ing • Server • DC/DC

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB45N03LT is suppl

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP45N03LT is suppl

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a