PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SC-74 plastic package. NPN complement: PBSS4350D. FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applica

50 V low VCEsat PNP transistor

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High current capability • High efficiency due to less heat genera

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High current capability • High efficiency due to less heat gene

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4350PAS 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturati

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4350PAS-Q 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter satura

High power dissipation (830 mW)

DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat g

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

TRANSISTOR(PNP)

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting LCD back-lighting Supply line switching circuits.

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

50 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat ge

50 V, 3 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4350X 2. Features and benefits • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less hea

50 V, 3 A PNP low VCEsat (BISS) transistor

50 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4350X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

50 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4350Z. FEATURES • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generatio

50 V low VCEsat PNP transistor

50 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High col

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50 V, 3 A PNP low VCEsat (BISS) transistor

文件：262.66 Kbytes Page：12 Pages

50 V, 3 A PNP low VCEsat transistor

Small Signal Transistor

50 V, 3 A PNP low VCEsat transistor

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

文件：108.39 Kbytes Page：14 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

50 V, 3 A PNP low VCEsat (BISS) transistor

文件：179.13 Kbytes Page：10 Pages

PNP Transistors

文件：1.35703 Mbytes Page：5 Pages

PNP Transistors

文件：1.74287 Mbytes Page：5 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

PNP low VCEsat (BISS) transistor 50 V, 3 A

文件：214.52 Kbytes Page：12 Pages

50 V low VCEsat PNP transistor

文件：156.52 Kbytes Page：9 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

50 V low VCEsat PNP transistor

文件：156.52 Kbytes Page：9 Pages

SMOKE DETECTOR WITH INTERCONNECT

The A5350CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking capability allows as many as 125 units to be interconnected so that if any unit senses smoke, all units will sound an alarm. In addition, special features are incor

T3/4 Right Angle LED Assembly

Description and Features Features • Perfect height and center spacing with 6 T-1 LEDs. • Labor-saving single-block installation. • Standoffs prevent flux entrapment. • Press-in pins hold part through soldering. • Compact, only 5.6mm high. Housing: Black thermoplastic polyester,UL94V-O Note

Ionization Smoke Detector with Interconnect

The A5350CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking capability allows as many as 125 units to be interconnected so that if any unit senses smoke, all units will sound an alarm. In addition, special features are incor

SMOKE DETECTOR WITH INTERCONNECT

The A5350CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking capability allows as many as 125 units to be interconnected so that if any unit senses smoke, all units will sound an alarm. In addition, special features are incor

CUSTOMER PRODUCT SPECIFICATION

文件：80.93 Kbytes Page：2 Pages