50 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4350Z. FEATURES • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generatio

50 V low VCEsat PNP transistor

丝印代码：PB5350；50 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current

50 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4350Z • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

Low VCEsat (BISS) transistors

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丝印代码：pb4350；50 V low VCEsat PNP transistor

文件：156.52 Kbytes Page：9 Pages

50 V, 3 A PNP low VCEsat transistor

PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4350Z-Q • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

丝印代码：SC-73；50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High col

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 50V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50 V low VCEsat PNP transistor

文件：156.52 Kbytes Page：9 Pages

PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SC-74 plastic package. NPN complement: PBSS4350D. FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applica

SATURN USER NETWORK INTERFACE(155.52 & 51.84 MBIT/S)

FEATURES • Single chip ATM User-Network Interface operating at 155.52 and 51.84 Mbit/s. • Provides an Analog Edge Interface that can be selected to interface directly with Category-5 Unshielded Twisted Pair (UTP-5) or Shielded Twisted Pair cables, or to interface with Pseudo-ECL (PECL) optic

0.510 INCH (13MM) SEVEN SEGMENT DISPLAYS

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155 Mb/s SATURN User Network Interface

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CAN Transceiver

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