General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability: IC and ICM

• High collector current gain (hFE) at high IC

• Higher efficiency leading to less heat genereation

• High temperature applications up to 175 °C

• AEC-Q101 qualified

Applications

• Power management

• DC-to-DC conversion

• Supply line switches

• Battery charger switches

• Peripheral drivers

• Driver in low supply voltage applications (e.g. lamps and LEDs)

• Inductive load driver