50 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat ge

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

丝印代码：ZD；50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

丝印代码：ZDH；TRANSISTOR(PNP)

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting LCD back-lighting Supply line switching circuits.

50 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4350T. • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation.\n• AEC-Q101 qualified;

双极晶体管

Low VCEsat (BISS) transistors

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丝印代码：FJ；50 V, 3 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

丝印代码：ZD；50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

50 V, 3 A PNP low VCEsat transistor

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4350T-Q • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

50 V, 3 A PNP low VCEsat (BISS) transistor

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PNP Transistors

文件：1.35703 Mbytes Page：5 Pages

PNP Transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PBSS5350TH/SOT23/TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PBSS5350T/SOT23/TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SC-74 plastic package. NPN complement: PBSS4350D. FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applica

SATURN USER NETWORK INTERFACE(155.52 & 51.84 MBIT/S)

FEATURES • Single chip ATM User-Network Interface operating at 155.52 and 51.84 Mbit/s. • Provides an Analog Edge Interface that can be selected to interface directly with Category-5 Unshielded Twisted Pair (UTP-5) or Shielded Twisted Pair cables, or to interface with Pseudo-ECL (PECL) optic

0.510 INCH (13MM) SEVEN SEGMENT DISPLAYS

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155 Mb/s SATURN User Network Interface

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CAN Transceiver

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