50 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat ge

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

TRANSISTOR(PNP)

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting LCD back-lighting Supply line switching circuits.

双极晶体管

50 V, 3 A PNP low VCEsat (BISS) transistor

Low VCEsat (BISS) transistors

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50 V, 3 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

50 V, 3 A PNP low VCEsat (BISS) transistor

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PNP Transistors

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PNP Transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PBSS5350TH/SOT23/TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50 V, 3 A PNP low VCEsat transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PBSS5350T/SOT23/TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SMOKE DETECTOR WITH INTERCONNECT

The A5350CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking capability allows as many as 125 units to be interconnected so that if any unit senses smoke, all units will sound an alarm. In addition, special features are incor

T3/4 Right Angle LED Assembly

Description and Features Features • Perfect height and center spacing with 6 T-1 LEDs. • Labor-saving single-block installation. • Standoffs prevent flux entrapment. • Press-in pins hold part through soldering. • Compact, only 5.6mm high. Housing: Black thermoplastic polyester,UL94V-O Note

Ionization Smoke Detector with Interconnect

The A5350CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking capability allows as many as 125 units to be interconnected so that if any unit senses smoke, all units will sound an alarm. In addition, special features are incor

SMOKE DETECTOR WITH INTERCONNECT

The A5350CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking capability allows as many as 125 units to be interconnected so that if any unit senses smoke, all units will sound an alarm. In addition, special features are incor

CUSTOMER PRODUCT SPECIFICATION

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