50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

50 V low VCEsat NPN transistor

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

50 V low VCEsat NPN transistor

丝印代码：43；50 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management

丝印代码：G6；50 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350PAS 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturation voltage VCEsat • High collector current capabili

丝印代码：G6；50 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350PAS-Q 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturation voltage VCEsat • High collector current capabi

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

丝印代码：4350SPN；50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

丝印代码：4350SS；50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

丝印代码：ZC；50 V; 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

50 V; 3 A NPN low VCEsat (BISS) transistor

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

50 V; 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat gene

丝印代码：ZC；50 V; 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

丝印代码：S43；50 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5350X 2. Features and benefits • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less hea

丝印代码：PB4350；50 V low VCEsat NPN transistor

1. General description NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. 2. Features and benefits • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE ) at high IC • Higher efficiency l

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT223 plastic package. PNP complement: PBSS5350Z. FEATURES • Low collector-emitter saturation voltage • High collector current capability: ICand ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation

50 V low VCEsat NPN transistor

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50 V low VCEsat NPN transistor

文件：316.41 Kbytes Page：9 Pages

50 V, 3 A PNP low VCEsat transistor

50 V, 3 A PNP low VCEsat transistor

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

文件：140.42 Kbytes Page：19 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN Transistors

文件：1.69201 Mbytes Page：5 Pages

50 V; 3 A NPN low VCEsat

文件：368.74 Kbytes Page：10 Pages

NPN Transistors

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Silicon NPN transistor in a SOT-89 Plastic Package

文件：913.97 Kbytes Page：6 Pages

丝印代码：S43；Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN low VCEsat (BISS) transistor 50 V, 3 A

文件：133.9 Kbytes Page：12 Pages

丝印代码：PB4350；50 V low VCEsat NPN transistor

文件：162.23 Kbytes Page：9 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

50 V low VCEsat NPN transistor

文件：162.23 Kbytes Page：9 Pages

POWER TRANSISTORS(16A,100-160V,125W)

16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353

POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts)

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