PBSS4350价格
参考价格：￥0.6324
型号：PBSS4350D,115 品牌：NXP 备注：这里有PBSS4350多少钱，2026年最近7天走势，今日出价，今日竞价，PBSS4350批发/采购报价，PBSS4350行情走势销售排行榜，PBSS4350报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PBSS4350 | 50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat | PHILIPS 飞利浦 |   | |
PBSS4350 | NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar | PHILIPS 飞利浦 | | |
PBSS4350 | 50 V low VCEsat NPN transistor | ETC 知名厂家 | ETC | |
丝印代码：43；50 V low VCEsat NPN transistor FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management | NEXPERIA 安世 | | ||
NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar | PHILIPS 飞利浦 | | ||
50 V low VCEsat NPN transistor | ETC 知名厂家 | ETC | | |
丝印代码：G6；50 V, 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350PAS 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturation voltage VCEsat • High collector current capabili | NEXPERIA 安世 | | ||
50 V, 3 A PNP low VCEsat transistor NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS5350PAS | NEXPERIA 安世 | | ||
丝印代码：G6；50 V, 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350PAS-Q 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturation voltage VCEsat • High collector current capabi | NEXPERIA 安世 | | ||
50 V, 3 A PNP low VCEsat transistor NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS5350PAS-Q | NEXPERIA 安世 | | ||
50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat | PHILIPS 飞利浦 | | ||
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
丝印代码：4350SPN；50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
丝印代码：4350SS；50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. | ETC 知名厂家 | ETC | | |
50 V; 3 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits. | FOSHAN 蓝箭电子 | | ||
50 V; 3 A NPN low VCEsat (BISS) transistor DESCRIPTION NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat gene | PHILIPS 飞利浦 | | ||
丝印代码：ZC；50 V; 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability | NEXPERIA 安世 | | ||
丝印代码：ZC；50 V; 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability | NEXPERIA 安世 | | ||
丝印代码：S43；50 V, 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5350X 2. Features and benefits • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less hea | NEXPERIA 安世 | | ||
丝印代码：PB4350；50 V low VCEsat NPN transistor 1. General description NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. 2. Features and benefits • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE ) at high IC • Higher efficiency l | NEXPERIA 安世 | | ||
50 V low VCEsat NPN transistor | ETC 知名厂家 | ETC | | |
50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT223 plastic package. PNP complement: PBSS5350Z. FEATURES • Low collector-emitter saturation voltage • High collector current capability: ICand ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation | PHILIPS 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
50 V low VCEsat NPN transistor 文件：316.41 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 文件：140.42 Kbytes Page：19 Pages | PHILIPS 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
50 V; 3 A NPN low VCEsat 文件：368.74 Kbytes Page：10 Pages | PHILIPS 飞利浦 | | ||
NPN Transistors 文件：1.69201 Mbytes Page：5 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.73385 Mbytes Page：5 Pages | KEXIN 科信电子 | | ||
Silicon NPN transistor in a SOT-89 Plastic Package 文件：913.97 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
丝印代码：S43；Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
NPN low VCEsat (BISS) transistor 50 V, 3 A 文件：133.9 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
丝印代码：PB4350；50 V low VCEsat NPN transistor 文件：162.23 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
50 V low VCEsat NPN transistor 文件：162.23 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
POWER TRANSISTORS(16A,100-160V,125W) 16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353 | MOSPEC 统懋 | | ||
POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts) 文件：98.45 Kbytes Page：4 Pages | POWEREX | |
PBSS4350产品属性
- 类型
描述
- Package name：
TSOP6
- Size (mm)：
2.9 x 1.5 x 1
- Polarity：
NPN
- Ptot (mW)：
600
- VCEO [max] (V)：
50
- IC [max] (mA)：
3000
- hFE [min]：
200
- Tj [max] (°C)：
150
- fT [min] (MHz)：
100
- Automotive qualified：
Y
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
1820 |
SOT-89 |
5030 |
原装正品，欢迎询价 |
|||
NEXPERIA/安世 |
23+ |
SOT457 |
6000 |
原装正品假一罚百!可开增票! |
|||
PHI |
2450+ |
SOT223 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
NEXPERIA/安世 |
2025+ |
SOT-223 |
5000 |
原装进口,免费送样品! |
|||
Nexperia(安世) |
24+ |
SO-8 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
恩XP |
25+ |
SOT-223 |
20000 |
普通 |
|||
PHI |
SOT223 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEXPERIA |
21+ |
30000 |
只做原装正品!现货库存!可开13点增值税票 |
||||
恩XP |
SOT-223 |
22+ |
10000 |
终端免费提供样品 可开13%增值税发票 |
|||
恩XP |
2022+ |
SOT-223 |
20000 |
原厂代理 终端免费提供样品 |
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PBSS4350规格书下载地址
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