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PBSS4350价格
参考价格：￥0.6324
型号：PBSS4350D,115 品牌：NXP 备注：这里有PBSS4350多少钱，2026年最近7天走势，今日出价，今日竞价，PBSS4350批发/采购报价，PBSS4350行情走势销售排行榜，PBSS4350报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PBSS4350 | 50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat | Philips 飞利浦 |   | |
PBSS4350 | NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar | Philips 飞利浦 | | |
PBSS4350 | 50 V low VCEsat NPN transistor | ETC 知名厂家 | ETC | |
NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar | Philips 飞利浦 | | ||
50 V low VCEsat NPN transistor | ETC 知名厂家 | ETC | | |
50 V low VCEsat NPN transistor FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management | NEXPERIA 安世 | | ||
50 V, 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350PAS 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturation voltage VCEsat • High collector current capabili | NEXPERIA 安世 | | ||
50 V, 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350PAS-Q 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturation voltage VCEsat • High collector current capabi | NEXPERIA 安世 | | ||
50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat | Philips 飞利浦 | | ||
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. | ETC 知名厂家 | ETC | | |
50 V; 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability | NEXPERIA 安世 | | ||
50 V; 3 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits. | FOSHAN 蓝箭电子 | | ||
50 V; 3 A NPN low VCEsat (BISS) transistor DESCRIPTION NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat gene | Philips 飞利浦 | | ||
50 V; 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability | NEXPERIA 安世 | | ||
50 V, 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5350X 2. Features and benefits • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less hea | NEXPERIA 安世 | | ||
50 V low VCEsat NPN transistor 1. General description NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. 2. Features and benefits • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE ) at high IC • Higher efficiency l | NEXPERIA 安世 | | ||
50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT223 plastic package. PNP complement: PBSS5350Z. FEATURES • Low collector-emitter saturation voltage • High collector current capability: ICand ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation | Philips 飞利浦 | | ||
50 V low VCEsat NPN transistor | ETC 知名厂家 | ETC | | |
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
50 V low VCEsat NPN transistor 文件：316.41 Kbytes Page：9 Pages | Philips 飞利浦 | | ||
50 V, 3 A PNP low VCEsat transistor | NEXPERIA 安世 | | ||
50 V, 3 A PNP low VCEsat transistor | NEXPERIA 安世 | | ||
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 文件：140.42 Kbytes Page：19 Pages | Philips 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
NPN Transistors 文件：1.69201 Mbytes Page：5 Pages | KEXIN 科信电子 | | ||
50 V; 3 A NPN low VCEsat 文件：368.74 Kbytes Page：10 Pages | Philips 飞利浦 | | ||
NPN Transistors 文件：1.73385 Mbytes Page：5 Pages | KEXIN 科信电子 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
Silicon NPN transistor in a SOT-89 Plastic Package 文件：913.97 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
NPN low VCEsat (BISS) transistor 50 V, 3 A 文件：133.9 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
50 V low VCEsat NPN transistor 文件：162.23 Kbytes Page：9 Pages | Philips 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
50 V low VCEsat NPN transistor 文件：162.23 Kbytes Page：9 Pages | Philips 飞利浦 | | ||
HEYClean® Brass Pressure Equalization and Drain Plugs 文件：158.47 Kbytes Page：1 Pages | Heyco | | ||
HEYClean® Brass Pressure Equalization and Drain Plugs 文件：152.36 Kbytes Page：1 Pages | Heyco | | ||
JST SH 9-Pin Cable - 100mm long 文件：1.28611 Mbytes Page：2 Pages | Adafruit | | ||
FET Input Analog Front End with ADC Driver 文件：799.17 Kbytes Page：38 Pages | AD 亚德诺 | | ||
FET Input Analog Front End with ADC Driver 文件：799.17 Kbytes Page：38 Pages | AD 亚德诺 | |
PBSS4350产品属性
- 类型
描述
- 型号
PBSS4350
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
50 V low VCEsat NPN transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
2025+ |
SOT-223 |
5000 |
原装进口,免费送样品! |
|||
恩XP |
24+ |
SOT-223 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PHI |
23+ |
SOT223 |
78400 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
恩XP |
12+ |
TO-223 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
恩XP |
20+ |
SOT-223 |
32500 |
现货很近!原厂很远!只做原装 |
|||
NEXPERIA/安世 |
2447 |
SC-74-6 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
PHI |
1923+ |
SOT163 |
90000 |
绝对进口原装现货库存特价销售 |
|||
PHI |
23+ |
SOT223 |
50000 |
全新原装正品现货,支持订货 |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
NEXPERIA |
21+ |
30000 |
只做原装正品!现货库存!可开13点增值税票 |
PBSS4350规格书下载地址
PBSS4350参数引脚图相关
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PBSS4350数据表相关新闻
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