50 V; 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat gene

50 V; 3 A NPN low VCEsat (BISS) transistor

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

丝印代码：ZC；50 V; 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

50 V; 3 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS5350T. • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation.\n• AEC-Q101 qualified;

Low VCEsat (BISS) transistors

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50 V; 3 A NPN low VCEsat transistor

• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation.\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

丝印代码：ZC；50 V; 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Transistors

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50 V; 3 A NPN low VCEsat

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NPN Transistors

文件：1.73385 Mbytes Page：5 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

POWER TRANSISTORS(16A,100-160V,125W)

16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353

POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts)

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