POWER TRANSISTORS(16A,100-160V,125W)

16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Respectively complement to type MJE4340/4341/4342/4343 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits

Silicon PNP Power Transistors

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 ·Low Saturation Voltage ·Complement to Type MJE4340/4341/4342/4343 APPLICATIONS ·Designed for use in h

Silicon NPN Power Transistors

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Trans GP BJT PNP 100V 20A 3-Pin(3+Tab) TO-247

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts)

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