PBSS4350S价格
参考价格：￥0.8009
型号：PBSS4350SPN,115 品牌：NXP 备注：这里有PBSS4350S多少钱，2026年最近7天走势，今日出价，今日竞价，PBSS4350S批发/采购报价，PBSS4350S行情走势销售排行榜，PBSS4350S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PBSS4350S | 50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat | PHILIPS 飞利浦 |   | |
PBSS4350S | 50 V low VCEsat NPN transistor | ETC 知名厂家 | ETC | |
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
PBSS4350SPN - 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor - NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5350SS ·Low collector-emitter saturation voltage VCEsat\n·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n·AEC-Q101 qualified; | NEXPERIA 安世 | | ||
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
丝印代码：4350SPN；50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
丝印代码：4350SS；50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
PBSS4350SS - 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor - NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5350SS ·Low collector-emitter saturation voltage VCEsat\n·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistors; | NEXPERIA 安世 | | ||
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. | ETC 知名厂家 | ETC | | |
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 50V 3A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A SC59 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 文件：140.42 Kbytes Page：19 Pages | PHILIPS 飞利浦 | | ||
50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat | PHILIPS 飞利浦 | | ||
NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar | PHILIPS 飞利浦 | | ||
POWER TRANSISTORS(16A,100-160V,125W) 16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353 | MOSPEC 统懋 | | ||
POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts) 文件：98.45 Kbytes Page：4 Pages | POWEREX | |
PBSS4350S产品属性
- 类型
描述
- Package version：
SOT96-1
- Package name：
SO8
- Size (mm)：
4.9 x 3.9 x 1.75
- Product status：
Production
- Polarity：
NPN/PNP
- number of transistors：
2
- P_tot [max] (mW)：
1200
- V_CEO [max] (V)：
50
- I_C [max] (A)：
2.7
- V_CEsat [max] (NPN) (mV)：
340
- V_CEsat [max] (PNP) (mV)：
-370
- R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)：
140.00000000000001
- h_FE [min]：
300
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SO-8 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Nexperia |
25+ |
SO-8 |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
PHI |
24+ |
SOP8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
2450+ |
SOP8 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
恩XP |
25+ |
SOT-457 |
30000 |
原装正品公司现货,假一赔十! |
|||
恩XP |
23+ |
9865 |
原装正品,假一赔十 |
||||
Nexperia |
24+ |
NA |
3728 |
进口原装正品优势供应 |
|||
恩XP |
SOP8 |
7500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
恩XP |
25+ |
SOP-8 |
20000 |
原装 |
PBSS4350S规格书下载地址
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