PBSS4350S价格

参考价格:¥0.8009

型号:PBSS4350SPN,115 品牌:NXP 备注:这里有PBSS4350S多少钱,2026年最近7天走势,今日出价,今日竞价,PBSS4350S批发/采购报价,PBSS4350S行情走势销售排行榜,PBSS4350S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PBSS4350S

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

Philips

飞利浦

PBSS4350S

50 V low VCEsat NPN transistor

ETC

知名厂家

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

ETC

知名厂家

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

NEXPERIA

安世

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

NEXPERIA

安世

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

NEXPERIA

安世

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

NEXPERIA

安世

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

ETC

知名厂家

NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

ETC

知名厂家

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:散装 描述:TRANS NPN 50V 3A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 3A SC59 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

PBSS4350SPN - 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

NEXPERIA

安世

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

文件:140.42 Kbytes Page:19 Pages

Philips

飞利浦

PBSS4350SS - 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

NEXPERIA

安世

HEYClean® Brass Pressure Equalization and Drain Plugs

文件:158.47 Kbytes Page:1 Pages

Heyco

HEYClean® Brass Pressure Equalization and Drain Plugs

文件:152.36 Kbytes Page:1 Pages

Heyco

JST SH 9-Pin Cable - 100mm long

文件:1.28611 Mbytes Page:2 Pages

Adafruit

FET Input Analog Front End with ADC Driver

文件:799.17 Kbytes Page:38 Pages

AD

亚德诺

FET Input Analog Front End with ADC Driver

文件:799.17 Kbytes Page:38 Pages

AD

亚德诺

PBSS4350S产品属性

  • 类型

    描述

  • 型号

    PBSS4350S

  • 功能描述

    两极晶体管 - BJT TRANS BISS AMMO LARGE

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-1-1 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
25+23+
SOT
19335
绝对原装正品全新进口深圳现货
恩XP
22+
SOP
3000
原装正品,支持实单
恩XP
21+
SOT-457
8080
只做原装,质量保证
恩XP
24+
SOT-457
30000
原装正品公司现货,假一赔十!
Nexperia
25+
N/A
20000
恩XP
24+
40000
PHI
24+
SOP8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
PHI
18+
PHILIPS
85600
保证进口原装可开17%增值税发票
PANJIT/强茂
2025+
SC-59
5000
原装进口,免费送样品!
ph
2023+
原厂封装
50000
原装现货

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