丝印代码：S43；50 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5350X 2. Features and benefits • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less hea

丝印代码：S43；Low VCEsat (BISS) transistors

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Silicon NPN transistor in a SOT-89 Plastic Package

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50 V, 3 A NPN low VCEsat (BISS) transistor

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor 50 V, 3 A

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50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

POWER TRANSISTORS(16A,100-160V,125W)

16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353

POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts)

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