型号 功能描述 生产厂家 企业 LOGO 操作
P13003

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Charger、 and Switch-mode power supplies

JINGDAO

晶导

P13003

高反压系列 (Bvceo:400-600V)

ETC

知名厂家

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 and Switch-mode power supplies

JINGDAO

晶导

高反压集成二极管系列(Bvceo:400-600V)

ETC

知名厂家

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

更新时间:2026-3-15 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEMIWELL
25+
TR-TO220ROHS
880000
明嘉莱只做原装正品现货
TECCOR
25+23+
TO-92
28758
绝对原装正品全新进口深圳现货
24+
5000
公司存货
原装PHASELI
19+
QFN16
20000
原装现货假一罚十
JD
1921+
TO-3P
2783
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ID
TO-3P
22+
6000
十年配单,只做原装
UN SEMICONDUCTOR
24+
con
10000
查现货到京北通宇商城
JD
23+
TO-3P
50000
全新原装正品现货,支持订货
SEMIWELL
23+
TO-220F
56688
原厂授权一级代理,专业海外优势订货,价格优势、品种
蓝箭
23+
TO-220
50000
全新原装正品现货,支持订货

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