Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

GENERAL DESCRIPTION The OP191, OP291, and OP491 are single, dual, and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a +3 V single supply as well as ±5 V dual supplies. FEATURES Single-supply oper

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

FEATURES Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal APPLICATIONS Industrial process control Battery-powered instrumentatio

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

GENERAL DESCRIPTION The OP191, OP291, and OP491 are single, dual, and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a +3 V single supply as well as ±5 V dual supplies. FEATURES Single-supply oper

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

GENERAL DESCRIPTION The OP191, OP291, and OP491 are single, dual, and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a +3 V single supply as well as ±5 V dual supplies. FEATURES Single-supply oper

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

GENERAL DESCRIPTION The OP191, OP291, and OP491 are single, dual, and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a +3 V single supply as well as ±5 V dual supplies. FEATURES Single-supply oper

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

FEATURES Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal APPLICATIONS Industrial process control Battery-powered instrumentatio

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

FEATURES Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal APPLICATIONS Industrial process control Battery-powered instrumentatio

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

FEATURES Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal APPLICATIONS Industrial process control Battery-powered instrumentatio

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

FEATURES Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal APPLICATIONS Industrial process control Battery-powered instrumentatio

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

FEATURES Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal APPLICATIONS Industrial process control Battery-powered instrumentatio

Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

FEATURES Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal APPLICATIONS Industrial process control Battery-powered instrumentatio

DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The OP292/OP492 are low cost, general purpose dual and quad operational amplifiers designed for single-supply applications and are ideal for +5 olt systems. FEATURES Single-Supply Operation: 4.5 V to 33 V Input Common-Mode Includes Ground Output Swings to Ground

Dual/Quad Single-Supply Operational Amplifiers

GENERAL DESCRIPTION The OP292/OP492 are low cost, general-purpose dual and quad operational amplifiers designed for single-supply applications and are ideal for 5 V systems. FEATURES Single-supply operation: 4.5 V to 33 V Input common-mode includes ground Output swings to ground

Dual/Quad Single-Supply Operational Amplifiers

FEATURES Single-supply operation: 4.5 V to 33 V Input common-mode includes ground Output swings to ground High slew rate: 3 V/μs High gain bandwidth: 4 MHz Low input offset voltage High open-loop gain No phase inversion APPLICATIONS Disk drives Mobile phones Servo controls Modems and fax

Dual/Quad Single-Supply Operational Amplifiers

FEATURES Single-supply operation: 4.5 V to 33 V Input common-mode includes ground Output swings to ground High slew rate: 3 V/μs High gain bandwidth: 4 MHz Low input offset voltage High open-loop gain No phase inversion APPLICATIONS Disk drives Mobile phones Servo controls Modems and fax

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),