Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Plastic infrared emitting diode

•Choice of narrow or wide irradiance pattern\n• Choice of power ranges\n• Choice of T-1¾, TO-18 or T-46 package\n• Higher power output than GaAs at equivalent LEDs;

双通道、精密、低电压、微功耗运算放大器

OP290是一款高性能、微功耗、双通道运算放大器，采用+1.6 V至+36 V单电源或±0.8 V至±18 V双电源供电。输入电压范围包括负供电轨，因而在单电源系统中，该器件可以处理低至地电压的输入信号。采用单电源供电时，其输出摆幅也包括地电压，因此可以实现零输入零输出式操作。OP290每个放大器耗用的静态电源电流均低于20 µA，但却能够向负载提供5 mA以上的输出电流。输入失调电压低于200 µV，无需外部零点校准。增益大于700,000，共模抑制比优于100 dB。电源抑制比小于5.6 µV/V，所以电池供电系统的失调电压变化极小。低失调电压和高增益可以使微功耗应用具备精密性能。极低的电 • 单/双电源供电：1.6 V至36 V，±0.8 V至±18 V\n\n• 单电源供电；输入和输出电压\n\n• 输入/输出范围包括地电压\n\n• 低电源电流：每个放大器20 µA（最大值）\n\n• 高输出驱动电流：5 mA（最小值）\n\n• 低输入失调电压：200 µV（典型值）\n\n• 高开环增益：400 V/mV（最小值）\n\n• 出色的电源抑制比：5.6 µV/V（最大值）\n\n• 工业标准8引脚双路引脚排列\n\n• 提供裸片形式;

Precision, Low Power, Micropower Dual Operational Amplifier

文件：189.9 Kbytes Page：12 Pages

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

文件：189.9 Kbytes Page：12 Pages

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

Precision, Low Power, Micropower Dual Operational Amplifier

文件：284.79 Kbytes Page：12 Pages

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

封装/外壳：T 1 3/4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 890NM 150MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

封装/外壳：T 1 3/4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 890NM 150MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

Precision, Low Power, Micropower Dual Operational Amplifier

文件：189.9 Kbytes Page：12 Pages

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low power dual operational amplifi

DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow

Silicon Complementary Transistors Audio Power Amplifier, Switch

Applications: • 1W Audio Power Amplifier Applications • Switching Applications

Silicon Complementary Transistors Audio Power Amplifier

Features: ● High Breakdown Voltage: V(BR)CEO = 80V Min ● High Current: IC = 500mA ● Low Saturation Voltage

Burst Mode Memory Controller

文件：318.78 Kbytes Page：20 Pages