Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Precision, Low Power, Micropower Dual Operational Amplifier

文件：189.9 Kbytes Page：12 Pages

Plastic infrared emitting diode

双通道、精密、低电压、微功耗运算放大器

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Precision, Low Power, Micropower Dual Operational Amplifier

FEATURES Single-/dual-supply operation: 1.6 V to 36 V, ±0.8 V to ±18 V True single-supply operation; input and output voltage Input/output ranges include ground Low supply current (per amplifier), 20 μA maximum High output drive, 5 mA minimum Low input offset voltage, 200 μV typical High open-loo

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

Precision, Low Power, Micropower Dual Operational Amplifier

文件：189.9 Kbytes Page：12 Pages

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

Precision, Low Power, Micropower Dual Operational Amplifier

文件：284.79 Kbytes Page：12 Pages

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

封装/外壳：T 1 3/4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 890NM 150MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

封装/外壳：T 1 3/4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 890NM 150MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

Precision, Low Power, Micropower Dual Operational Amplifier

文件：189.9 Kbytes Page：12 Pages

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