Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

封装/外壳：T 1 3/4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 890NM 150MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Plastic Infrared Emitting Diode

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Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low power dual operational amplifi

DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow

Silicon Complementary Transistors Audio Power Amplifier, Switch

Applications: • 1W Audio Power Amplifier Applications • Switching Applications

Silicon Complementary Transistors Audio Power Amplifier

Features: ● High Breakdown Voltage: V(BR)CEO = 80V Min ● High Current: IC = 500mA ● Low Saturation Voltage

Burst Mode Memory Controller

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