MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

Dual N-Channel Power MOSFET 60V, 111A, 4.2mΩ

丝印代码：5C650L；MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

丝印代码：650LWF；MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET ??Power, Dual, N-Channel 60 V, 4.2 m, 111 A

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