Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

双 N 沟道功率 MOSFET 40 V，27 A，17.0 mΩ

Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

丝印代码：5C478L；Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

丝印代码：478LWF；Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

丝印代码：5C478N；Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

丝印代码：478NWF；Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

双 N 沟道功率 MOSFET 40V，29A，14.5mΩ

MOSFET ??Power, Single N-Channel 40 V, 8.4 m, 42 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 40 V, 7.7 m, 45 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 40 V, 14 m, 26 A

文件：208.05 Kbytes Page：7 Pages

丝印代码：478L；MOSFET ??Power, Single N-Channel 40 V, 14 m, 26 A

文件：208.05 Kbytes Page：7 Pages

丝印代码：78LW；MOSFET ??Power, Single N-Channel 40 V, 14 m, 26 A

文件：208.05 Kbytes Page：7 Pages