Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL

Power MOSFET 40 V, 6.9 m, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5852NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Cap

Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL

Power MOSFET 40 V, 6.9 m, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5852NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Cap

Power MOSFET

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Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 28 (7/36) AWG Silver Plated Copper 0.015 b) Insulation 0.010 Wall, Nom. PTFE 0.035+/- 0.004 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, GRAY, VIOLET, WHITE/BLACK, WHITE/BLUE WHITE/ORANGE, WHITE/VIOLET

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. • [MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive • [SBD]

Power MOSFET(Vdss=20V)

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

Customer Specification

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