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IRF5852价格
参考价格：￥0.7150
型号：IRF5852TR 品牌：IR 备注：这里有IRF5852多少钱，2025年最近7天走势，今日出价，今日竞价，IRF5852批发/采购报价，IRF5852行情走势销售排行榜，IRF5852报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF5852 | Power MOSFET(Vdss=20V) Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua | IRF |   | |
IRF5852 | Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua | IRF | | |
IRF5852 | Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua | IRF | | |
IRF5852 | Power MOSFET(Vdss=20V) | Infineon 英飞凌 | | |
Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua | IRF | | ||
Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua | IRF | | ||
Ultra Low On-Resistance Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua | IRF | | ||
Customer Specification Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 28 (7/36) AWG Silver Plated Copper 0.015 b) Insulation 0.010 Wall, Nom. PTFE 0.035+/- 0.004 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, GRAY, VIOLET, WHITE/BLACK, WHITE/BLUE WHITE/ORANGE, WHITE/VIOLET | ALPHAWIREAlpha Wire 阿尔法电线 | | ||
Introduction to Knowles Precision Devices Applications RF amplifier LC Filters and Networks Broadband Wireless LAN Medical Devices Cordless and Cellular phones DR/Crystal Oscillator Microstrip line filters | KNOWLES 楼氏电子 | | ||
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. • [MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive • [SBD] | SANYO 三洋 | | ||
Customer Specification 文件：69.76 Kbytes Page：3 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |
IRF5852产品属性
- 类型
描述
- 型号
IRF5852
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=20V)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
3K/REEL |
3500 |
全新原装假一赔十 |
|||
IR |
24+ |
SOT-23- |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TSOT-6 |
160813 |
明嘉莱只做原装正品现货 |
|||
24+ |
TSOP6 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
IR |
20+ |
SOT23-6 |
6368 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
25+ |
TSOP-6 |
39500 |
IR全新特价IRF5852TRPBF即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
23+ |
TSOP-6 |
50000 |
原装正品 支持实单 |
|||
IOR |
25+ |
PLCC |
18000 |
原厂直接发货进口原装 |
|||
SOT-163 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
IR |
24+ |
SOT23-3 |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
IRF5852规格书下载地址
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