Power MOSFET(Vdss=20V)

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

Power MOSFET(Vdss=20V)

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

Digital Signal Processor

Digital Signal Processor

Dynamic Range Compression LSI

OVERVIEW The SM5852CS is a digital signal processor IC that performs dynamic range compression for use in digital audio reproduction equipment. It is designed for use with a 44.1 kHz sampling frequency. FEATURES ■ 2-channel processing ■ 6 input-level dependent dynamic gain characteristics ■ D

Digital Dynamic Bass Boost LSI

OVERVIEW The SM5852FS is a digital signal processor IC that performs DDBB (digital dynamic bass boost) processing for use in digital audio reproduction equipment. It is designed for use with a 44.1 kHz sampling frequency. FEATURES ■ 2-channel processing ■ Improved DDBB mode channel separation