isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 90V(Min) ·Static Drain-Source On-Resistance -RDS(on) =16.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，功率 MOSFET，90V，50A，17mΩ

Power MOSFET

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Power MOSFET 90 V, 17 m, 50 A, Single N.Channel

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N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 90 A RDS(ON)

Power MOSFET

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Power MOSFET

文件：117.08 Kbytes Page：6 Pages

Power MOSFET 90 V, 17 m, 50 A, Single N.Channel

文件：113.51 Kbytes Page：6 Pages

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 28 (7/36) AWG Bare Copper 0.015 b) Insulation 0.008 Wall, Nom. Modified Polyphenylene Ether 0.031+/- 0.002 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, GREEN/YELLOW

FET Drive Simple Sequencers

GENERAL DESCRIPTION The ADM6819 and ADM6820 are simple power supply sequencers with FET drive capability for enhancing N-channel MOSFETs. These devices can monitor a primary supply voltage and enable/disable an external N-channel FET for a secondary supply. The ADM6819 has the ability to monitor

Internal LO frequency range

GENERAL DESCRIPTION The ADRF6820 is a highly integrated demodulator and synthesizer ideally suited for next generation communication systems. The feature rich device consists of a high linearity broadband I/Q demodulator, an integrated fractional-N phase-locked loop (PLL), and a low phase noise m

Customer Specification

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Mounting brackets

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