MOSFET ??Power, Single N-Channel 40 V, 5.8 m, 59 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 59A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，功率 MOSFET，40V，59A，5.8mΩ

Power MOSFET 40 V, 5.2 m, 64 A, Single N?묬hannel

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Power MOSFET 40 V, 5.2 m, 64 A, Single N?묬hannel

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 40 V, 5.8 m, 59 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Single N-Channel Power MOSFET, 40V, 64A, 5.2mΩ Logic Level

包装：卷带（TR） 描述：T6 40V DPAK EXPANSION AND 分立半导体产品 晶体管 - FET，MOSFET - 单个

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 59A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET ??Power, Single, N-Channel 40 V, 5.8 m, 59 A

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