MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 70 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，功率 MOSFET，40V，70A，4.9mΩ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 73A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET ??Power, Single N-Channel 40 V, 4.6 m, 73 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 40 V, 4.6 m, 73 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 70 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Single N-Channel Power MOSFET, 40V, 73A, 4.6mΩ

Single N?묬hannel Power MOSFET

文件：86.89 Kbytes Page：6 Pages

Power MOSFET

文件：85.49 Kbytes Page：6 Pages

MOSFET ??Power, Single, N-Channel 40 V, 4.8 m, 74 A

文件：207.57 Kbytes Page：7 Pages

MOSFET ??Power, Single, N-Channel 40 V, 4.8 m, 74 A

文件：207.57 Kbytes Page：7 Pages