isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道功率 MOSFET 40V，23A，31mΩ

Power MOSFET 40 V, 23 A, Single N?묬hannel, DPAK/IPAK

文件：81.39 Kbytes Page：7 Pages

Power MOSFET 40 V, 23 A, Single N?묬hannel, DPAK/IPAK

文件：81.39 Kbytes Page：7 Pages

BROADBAND: RF & WIRELESS

RF, HFC & CATV APPLICATIONS Pluse offers a comprehensive line of RF magnetic components for use in wireless and RF applications, including mobile communications, cable television, hybrid fiber/coax (HFC) equipment, cable modems, set-top boxes, and home networking. The components are al

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE5807B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Standard Product ACE5807B is Pb-free. Features • VDS (V) = -12V • ID= -16A • RDS(ON)  

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE5807B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Standard Product ACE5807B is Pb-free. Features • VDS (V) = -12V • ID= -16A • RDS(ON)  

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

文件：1.09198 Mbytes Page：71 Pages

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

文件：1.16731 Mbytes Page：75 Pages