型号 功能描述 生产厂家 企业 LOGO 操作
NVD5805N

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 51A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NVD5805N

单 N 沟道,功率 MOSFET,40V,51A,9.5mΩ

ONSEMI

安森美半导体

NVD5805N

Power MOSFET 40 V, 51 A, Single N.Channel, DPAK

文件:143.51 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:104.07 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 51 A, Single N.Channel, DPAK

文件:143.51 Kbytes Page:6 Pages

ONSEMI

安森美半导体

12-Bit, 5MSPS A/D Converter

The HI5805 is a monolithic, 12-bit, Analog-to-Digital Converter fabricated in Intersil’s HBC10 BiCMOS process. It is designed for high speed, high resolution applications where wide bandwidth and low power consumption are essential. Features • Sampling Rate . . . . . . . . . . . . . . . . . . .

INTERSIL

Power MOSFET(Vdss=-30V)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP

IRF

SINGLE-CHIP 4-BIT MICROCOMPUTER WITH LCD DRIVERS

SINGLE-CHIP 4-BIT MICROCOMPUTER WITH LCD DRIVERS

SANYO

三洋

PHOTO DETECTOR FOR DIGITAL VIDEO DISK

DESCRIPTION This six diodes photodetector includes six low noise I/V amplifiers with a sensitivity switching for adaptation to different optical pickups and disks. The detector pattern is adaptable for astigmatism focus method, 3 beams tracking and differential phase detection methods. The STV5

STMICROELECTRONICS

意法半导体

PHOTO DETECTOR FOR DIGITAL VIDEO DISK

DESCRIPTION This six diodes photodetector includes six low noise I/V amplifiers with a sensitivity switching for adaptation to different optical pickups and disks. The detector pattern is adaptable for astigmatism focus method, 3 beams tracking and differential phase detection methods. The STV5

STMICROELECTRONICS

意法半导体

NVD5805N产品属性

  • 类型

    描述

  • 型号

    NVD5805N

  • 功能描述

    MOSFET NFET DPAK 40V 51A 9.5MOHM

  • RoHS

  • 制造商

    ON Semiconductor

  • 漏极连续电流

    电阻汲极/源极

更新时间:2026-3-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
DPAK
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
DPAK
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
18+
TO-252
80
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ON Semiconductor
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
ON
23+
TO-252
80
正规渠道,只有原装!
ON
22+
TO-252
20000
公司只做原装 品质保障
ON
26+
TSSOP14
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
ON/安森美
23+
DPAK-3
89630
当天发货全新原装现货
ONSEMI/安森美
2511
DPAK-3
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价

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