isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 54A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，60V，54A，17mΩ，单 N 沟道，DPAK，逻辑电平

Single N?묬hannel Power MOSFET

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Single N?묬hannel Power MOSFET

文件：114.14 Kbytes Page：6 Pages

N-CHANNEL JFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF5484 Series types are surface mount, N-Channel JFETs designed for RF amplifier and mixer applications. These devices will operate well in the VHF/UHF frequency range.

丝印代码：6B；N-Channel RF Amplifier

N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

丝印代码：6B；SFET RF,VHF, UHF, Amplitiers

N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50.

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

N-channel field-effect transistors

DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.