Power MOSFET

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??0 V, 16 m, ??1 A, Single P?묬hannel

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isc P-Channel MOSFET Transistor

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单 P 沟道，功率 MOSFET，-60V，-61A，16mΩ

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -50A RDS(ON)

Power MOSFET

文件：81.84 Kbytes Page：6 Pages

??0 V, 16 m, ??1 A, Single P?묬hannel

文件：146.49 Kbytes Page：6 Pages

Power MOSFET

文件：81.84 Kbytes Page：6 Pages

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transi

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transi

N-channel 3-phase DC motor 100V AC direct drive

N-channel 3-phase DC motor 100V AC direct drive

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing

POWER ZENERS

DESCRIPTION Fused-in-glass, metallurgically-bonded 5 watt zeners. FEATURES • 2 Times Greater Surge Rating than Conventional 10 Watt Zeners • Small Physical Size