MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 360 m, 10 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

包装：剪切带（CT） 描述：MOSFET N-CH 600V DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 10 A, 360 mΩ, DPAK

MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 10 A, 360 m

General Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction l

MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 360 m, 10 A

文件：356.61 Kbytes Page：11 Pages

MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 360 m, 10 A

文件：217.78 Kbytes Page：10 Pages