isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 12 A, 260 mΩ, D2PAK

MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-drive

文件：333.3 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：316.08 Kbytes Page：10 Pages

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：416.68 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

文件：309.72 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：303.51 Kbytes Page：2 Pages