Very Low Forward Voltage Trench-based Schottky Rectifier

文件：69.39 Kbytes Page：5 Pages

沟槽肖特基整流器，低 VF，10A，120V

封装/外壳：8-PowerTDFN，5 引线 包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 10A 5DFN 分立半导体产品 二极管 - 整流器 - 单

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：69.39 Kbytes Page：5 Pages

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：69.39 Kbytes Page：5 Pages

封装/外壳：8-PowerTDFN，5 引线 包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 10A 5DFN 分立半导体产品 二极管 - 整流器 - 单

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a