Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features  Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V  Ultra Low Gate Charge (QG(tot) = 105 nC)  Low Effective Output Capacitance (Coss = 162 pF)  100 Avalanche Tested  TJ = 175C  RoHS Compliant Typical Applications  SMPS (Switching Mode Power Supplies)

Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, Power88

Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features  Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V  Ultra Low Gate Charge (QG(tot) = 105 nC)  Low Effective Output Capacitance (Coss = 162 pF)  100 Avalanche Tested  TJ = 175C  RoHS Compliant Typical Applications  SMPS (Switching Mode Power Supplies)

Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

丝印代码：TBL045065SC1；Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

Silicon Carbide SiC MOSFET - 31 mohm, 650V,M2, D2PAK-71

Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exem

丝印代码：BG045N065SC1；MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 31 m, 62 A

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