位置：首页 > IC中文资料 > NTBG045N065SC1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTBG045N065SC1 | Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o | ONSEMI 安森美半导体 |   | |
NTBG045N065SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o | ONSEMI 安森美半导体 | | |
NTBG045N065SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L | ONSEMI 安森美半导体 | | |
NTBG045N065SC1 | MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 31 m, 62 A 文件：296.84 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, TOLL Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) | ONSEMI 安森美半导体 | | ||
Silicon Carbide SiC MOSFET - 32 mohm, 650 V, M2, TO-247-3L Features • Typ. RDS(on) = 32 m @ VGS = 18 V Typ. RDS(on) = 42 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
onsemi(安森美) |
24+ |
TO-263-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
ON(安森美) |
25+ |
TO-263-7L |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi(安森美) |
2025+ |
TO-263-7 |
55740 |
||||
ONSEMI |
25+ |
N/A |
7500 |
原装现货17377264928微信同号 |
|||
ON(安森美) |
2511 |
D2PAK-7L |
8484 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
NTBG045N065SC1芯片相关品牌
NTBG045N065SC1规格书下载地址
NTBG045N065SC1参数引脚图相关
- PCBA
- pc817
- pc133
- pc100
- PC/104
- p800
- p600
- otl功率放大器
- opa642
- opa2604
- op37
- op07中文资料
- op07
- OLED显示屏
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- NTC21
- NTC20D8
- NTC20D5
- NTC1D20
- NTC1D15
- NTC1D13
- NTC16D9
- NTC16D8
- NTC16D7
- NTC16D5
- NTC120
- NTC111
- NTC110
- NTC10D9
- NTC10D8
- NTC10D7
- NTC10D5
- NTC10
- NTC0805
- NTC0603
- NTBGS4D1N15MC
- NTBGS3D5N06C
- NTBGS2D5N06C
- NTBGS1D5N06C
- NTBGS004N10G
- NTBGS002N06C
- NTBGS001N06C
- NTBG160N120SC1_V02
- NTBG160N120SC1_V01
- NTBG160N120SC1
- NTBG1000N170M1
- NTBG080N120SC1_V02
- NTBG080N120SC1_V01
- NTBG080N120SC1
- NTBG070N120M3S
- NTBG060N090SC1_V01
- NTBG060N090SC1
- NTBG060N065SC1
- NTBG045N065SC1_V02
- NTBG045N065SC1_V01
- NTBG040N120SC1_V02
- NTBG040N120SC1_V01
- NTBG040N120SC1
- NTBG040N120M3S
- NTBG032N065M3S
- NTBG030N120M3S
- NTBG028N170M1
- NTBG025N065SC1
- NTBG023N065M3S
- NTBG022N120M3S_V02
- NTBG022N120M3S_V01
- NTBG022N120M3S
- NTBG020N120SC1_V02
- NTBG020N120SC1_V01
- NTBG020N120SC1
- NTBG020N090SC1_V01
- NTBG020N090SC1
- NTBG015N065SC1_V02
- NTBG015N065SC1_V01
- NTBG015N065SC1
- NTBA104
- NTB5605
- NTB4302
- NTB0104
- NTB0102
- NTA-X
- NTAG213
- NTAG210
- NTA2425
- NTA2410
- NT95089
- NT91215
- NT91214
- NT90TP
- NT90T-C
- NT90T-B
- NT90T
- NT90-B
- NT90-A
- NT90_07
NTBG045N065SC1数据表相关新闻
NTB35N15T4G MOSFET
NTB35N15T4G
2024-11-26NTBG070N120M3S MOSFET
onsemi 的 NTBG070N120M3S 是应用了 M3S 技术的 EliteSiC、65 mΩ、1200 V SiC MOSFET，采用 D2PAK-7L 封装
2024-4-17NTCC201E4103FT-C
NTC熱敏電阻器 NTC BARE DIE AG2 10K 1% TAPE E4
2023-12-28NTCC201E4502FT-C
NTCC201E4502FT-C
2023-10-10NTBG014N120M3P
NTBG014N120M3P
2023-7-4NTB5411NT4G，兴中扬只售原装
NTB5411NT4G，兴中扬只售原装
2019-11-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
