位置：首页 > IC中文资料 > NTBG045N065SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTBG045N065SC1 | Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o | ONSEMI 安森美半导体 |   | |
NTBG045N065SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o | ONSEMI 安森美半导体 | | |
NTBG045N065SC1 | MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 31 m, 62 A 文件：296.84 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, TOLL Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) | ONSEMI 安森美半导体 | | ||
Silicon Carbide SiC MOSFET - 32 mohm, 650 V, M2, TO-247-3L Features • Typ. RDS(on) = 32 m @ VGS = 18 V Typ. RDS(on) = 42 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
FSC |
23+ |
原厂原封 |
74400 |
订货1周 原装正品 |
|||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
onsemi(安森美) |
24+ |
TO-263-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
ON |
2126 |
D2PAK-7 |
686 |
原装正品现货,德为本,正为先,通天下! |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
ON(安森美) |
23+ |
D2PAK-7L |
15764 |
公司只做原装正品,假一赔十 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi(安森美) |
2025+ |
TO-263-7 |
55740 |
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DdatasheetPDF页码索引
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