单 P 沟道，增强模式功率 MOSFET，-20V，-10A，14mΩ

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-10 A (VGS =-10V) ● RDS(ON)

Power MOSFET -10 Amps, -20 Volts P?묬hannel Enhancement?묺ode Single SO?? Package

MOSFET – Power, Single, P-Channel, Enhancement Mode, SOIC-8 -10 Amps, -20 Volts Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature SOIC−8 Surface Mount Package • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Sw

Power MOSFET ??0 Amps, ??0 Volts P?묬hannel Enhancement?묺ode

文件：180.7 Kbytes Page：6 Pages

Power MOSFET ??0 Amps, ??0 Volts P?묬hannel Enhancement?묺ode

文件：180.7 Kbytes Page：6 Pages

Power MOSFET ??0 Amps, ??0 Volts P?묬hannel Enhancement?묺ode

文件：180.7 Kbytes Page：6 Pages

Single Phase 10.0 Amps. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini

P-Channel 20-V (D-S) MOSFET

文件：1.031119 Mbytes Page：9 Pages

Glass Passivated Bridge Rectifiers

文件：244.16 Kbytes Page：4 Pages

Single Phase 10.0 Amps. Glass Passivated Bridge Rectifiers

文件：226.44 Kbytes Page：2 Pages

Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers

文件：138.11 Kbytes Page：2 Pages